MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

被引：1

作者：

Reznik, R. R. ^{[1
,2
,4
,7
]}

Kotlyar, K. P. ^{[1
]}

Soshnikov, I. P. ^{[1
,3
,4
]}

Kukushkin, S. A. ^{[6
]}

Osipov, A. V. ^{[6
]}

Nikitina, E. V. ^{[1
]}

Cirlin, G. E. ^{[1
,4
,5
,7
]}

机构：

[1] St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia

[2] Peter Great St Petersburg Polytech Univ, Polytech Skaya 29, St Petersburg 195251, Russia

[3] RAS, Ioffe Phys Tech Inst, Politekh Skaya 26, St Petersburg 194021, Russia

[4] RAS, Inst Analyt Instrumentat, Rizhsky 26, St Petersburg 190103, Russia

[5] St Petersburg State Univ, Fock Inst Phys, Petrodvorets 198504, Russia

[6] Russian Acad Sci, Inst Problems Mech Engn, Bolshoj 6, St Petersburg 199178, Russia

[7] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

来源：

4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷

基金：

俄罗斯科学基金会;

关键词：

SILICON-CARBIDE;

D O I：

10.1088/1742-6596/917/3/032014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.

引用

页数：4

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