The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires

被引：3

作者：

Reznik, R. R. ^{[1
,2
,3
]}

Kotlyar, K. P. ^{[2
,4
]}

Ilkiv, I. V. ^{[1
,2
]}

Soshnikov, I. P. ^{[1
,4
,5
,7
]}

Kukushkin, S. A. ^{[3
,6
]}

Osipov, A. V. ^{[3
,6
]}

Nikitina, E. V. ^{[1
]}

Cirlin, G. E. ^{[1
,2
,3
,5
]}

机构：

[1] St Petersburg Acad Univ, RAS, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

[2] Peter The Great St Petersburg Polytech Univ, St Petersburg 195251, Russia

[3] ITMO Univ, St Petersburg 197101, Russia

[4] RAS, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[5] RAS, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[6] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia

[7] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia

来源：

3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016) | 2016年 / 741卷

基金：

俄罗斯科学基金会;

关键词：

SILICON-CARBIDE; GALLIUM NITRIDE; PHASE EPITAXY;

D O I：

10.1088/1742-6596/741/1/012027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates the possibility of using a silicon substrate with nanoscale buffer layer of silicon carbide for growth of GaN nanowires by molecular epitaxy on. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.

引用

页数：4

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