MBE Growth and Optical Properties of GaN Nanowires on SiC/Si(111) Hybrid Substrate

被引：5

作者：

Reznik, R. ^{[1
,2
,3
]}

Kotlyar, K. ^{[2
,4
]}

Ilkiv, I. ^{[1
,2
]}

Soshnikov, I. ^{[1
,4
,5
,7
]}

Kukushkin, S. ^{[3
,6
]}

Osipov, A. ^{[3
,6
]}

Nikitina, E. ^{[1
]}

Cirlin, G. ^{[1
,2
,3
,5
]}

机构：

[1] St Petersburg Acad Univ, Russian Acad Sci, Khlopina 8-3, St Petersburg 194021, Russia

[2] Peter Great St Petersburg Polytech Univ, Polytech Skaya 29, St Petersburg 195251, Russia

[3] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

[4] Ioffe Physicotech Inst RAS, Polytech Skaya 29, St Petersburg 194021, Russia

[5] Inst Analyt Instrumentat RAS, Rizhsky 26, St Petersburg 190103, Russia

[6] Russian Acad Sci, Inst Problems Mech Engn, Bolshoj 6, St Petersburg 199178, Russia

[7] St Petersburg Electrotech Univ LETI, Prof Popova 5, St Petersburg 197376, Russia

来源：

STATE-OF-THE-ART TRENDS OF SCIENTIFIC RESEARCH OF ARTIFICIAL AND NATURAL NANOOBJECTS, (STRANN-2016) | 2016年 / 1748卷

基金：

俄罗斯科学基金会;

关键词：

SILICON-CARBIDE; GALLIUM NITRIDE; PHASE EPITAXY;

D O I：

10.1063/1.4954355

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work demonstrates the possibility of growth of GaN nanowires by molecular epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide. Morphological and optical properties of the grown arrays are studied. It is shown that the integral intensity of the photoluminescence of such structures is more than 2 times higher than the best NWs GaN structures without buffer layer of silicon carbide.

引用

页数：5

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