MBE Growth and Optical Properties of GaN, InN, and A3B5 Nanowires on SiC/Si(111) Hybrid Substrate

被引：0

作者：

Reznik, R. R. ^{[1
,2
,3
,4
]}

Kotlyar, K. P. ^{[1
]}

Ilkiv, I., V ^{[1
]}

Khrebtov, A., I ^{[4
]}

Soshnikov, I. P. ^{[1
,3
,5
]}

Kukushkin, S. A. ^{[6
]}

Osipov, A., V ^{[6
]}

Nikitina, E., V ^{[1
]}

Cirlin, G. E. ^{[1
,2
,3
]}

机构：

[1] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, RAS, Khlopina 8-3, St Petersburg, Russia

[2] Peter Great St Petersburg Polytech Univ, Polytech Skaya 29, St Petersburg, Russia

[3] RAS, Inst Analyt Instrumentat, Rizhsky 26, St Petersburg, Russia

[4] ITMO Univ, Kronverkskiy Pr 49, St Petersburg, Russia

[5] RAS, Ioffe Phys Tech Inst, Politekhnicheskaya 26, St Petersburg, Russia

[6] Russian Acad Sci, Inst Problems Mech Engn, Bolshoj 6, St Petersburg, Russia

来源：

ADVANCES IN CONDENSED MATTER PHYSICS | 2018年 / 2018卷

关键词：

GALLIUM NITRIDE; TEMPERATURE; SILICON; EPITAXY; LATTICE; ORIGIN;

D O I：

10.1155/2018/1040689

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possibility of GaN, InN, and A(3)B(5) nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A(3)B(5) NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.

引用

页数：5

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