Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate

被引：1

作者：

Shtrom, I. V. ^{[1
,2
]}

Kotlyar, K. P. ^{[1
]}

Filosofov, N. G. ^{[3
]}

Serov, A. Yu. ^{[3
]}

Krizhkov, D. I. ^{[4
]}

Samsonenko, Yu. B. ^{[2
]}

Ilkiev, I. V. ^{[1
]}

Reznik, R. R. ^{[1
,2
]}

Agekyan, V. F. ^{[3
]}

Cirlin, G. E. ^{[1
,2
]}

机构：

[1] St Petersburg Acad Univ, RAS, St Petersburg 194021, Russia

[2] RAS, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[3] St Petersburg State Univ, St Petersburg 199034, Russia

[4] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 16期

关键词：

PHOTOLUMINESCENCE;

D O I：

10.1134/S1063782618160285

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present the results of photoluminescence measurements of AlxGa1-xAs nanowires, together with the transmission electron microscopy structural analysis. AlxGa1-xAs nanowires were grown by molecular beam epitaxy under the nominal aluminum contents ? = 0.3-0.7. The obtained results demonstrate the presence of wurtzite structure in AlxGa1-xAs nanowires.

引用

页码：2146 / 2148

页数：3

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