OBIC analysis for 1.3 kV 6H-SiC p+n planar bipolar diodes protected by Junction Termination Extension

被引：8

作者：

Raynaud, C ^{[1
]}

Wang, SR ^{[1
]}

Planson, D ^{[1
]}

Lazar, M ^{[1
]}

Chante, JP ^{[1
]}

机构：

[1] Inst Natl Sci Appl, UMR CNRS 5005, CEGELY, F-69621 Villeurbanne, France

来源：

关键词：

SiC; electrical properties characterization; high power electronics;

D O I：

10.1016/j.diamond.2004.02.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

1.3 W 6H-SiC planar bipolar diodes have been designed, fabricated and investigated to determine blocking voltage characteristics. Current-voltage measurements in forward and reverse bias and OBIC measurements have been performed on different diodes with and without periphery protection using Al ion implantation. More than 70% of the diodes protected with extended periphery protection are able to block 1100 V. For the first time, Medici(TM) software was used to simulate theoretical photocurrent spectra that are compared qualitatively to experimental results. Electrical analyses and theoretical simulations show that these good results in terms of breakdown voltage are due to the efficiency of the process for periphery protection. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：1697 / 1703

页数：7

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