4H-and 6H-SiC vertical static induction transistor with p-n junction as a gate

被引：0
|
作者：
Sankin, VI [1 ]
Shkrebiy, PP [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, Russian Acad Sci, St Petersburg 194021, Russia
来源：
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISDRS.2001.984584
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：579 / 582
页数：4
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