P-N Junction creation in 6H-SiC by aluminum implantation

被引：3
|
作者：
Ottaviani, L
Locatelli, ML
Planson, D
Isoird, K
Chante, JP
Morvan, E
Godignon, P
机构：
[1] Inst Natl Sci Appl, CEGELY, F-69621 Villeurbanne, France
[2] UAB, Ctr Nacl Microelect, Barcelona 08193, Spain
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷
关键词：
implantation; furnace annealing; recrystallization; diode characteristics;
D O I：
10.1016/S0921-5107(98)00547-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bipolar diodes, protected with junction termination extensions, were processed in 6H-SiC. A 5-fold aluminum implantation was carried out for the main p(+)-n junction creation, which led to the material amorphization. The recrystallization variation with the annealing temperature and duration is examined in this paper. We performed the Al implantations with apposite energy orders, in order to study their influence on the diode electrical characteristics. The increasing order led to a better forward conduction. and reverse leakage currents more important. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：424 / 428
页数：5
相关论文
共 50 条
  • [1] P-n junction creation in 6H-SiC by aluminum implantation
    Ottaviani, L.
    Locatelli, M.L.
    Planson, D.
    Isoird, K.
    Chante, J.P.
    Morvan, E.
    Godignon, P.
    [J]. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999, 61 : 424 - 428
  • [2] The premature breakdown in 6H-SiC p-n junction
    Sankin, V. I.
    Monakhov, A. M.
    Shkrebiy, P. P.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 431 - +
  • [3] P-N junction formation in 6H-SiC by acceptor implantation into n-type substrate
    Rao, MV
    Gardner, J
    Griffiths, P
    Holland, OW
    Kelner, G
    Chi, PH
    Simons, DS
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4): : 333 - 338
  • [4] Improved annealing process for 6H-SiC p+-n junction creation by Al implantation
    Lazar, M
    Ottaviani, L
    Locatelli, ML
    Planson, D
    Canut, B
    Chante, JP
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 921 - 924
  • [5] ELECTROLUMINESCENCE OF ALUMINUM-DOPED 6H-SIC P-N STRUCTURES
    LEBEDEV, AA
    POLETAEV, NK
    RASTEGAEVA, MG
    SAVKINA, NS
    [J]. SEMICONDUCTORS, 1994, 28 (10) : 981 - 984
  • [6] Giant burst of impact ionization in a p-n junction of the 6H-SiC polytype
    Sankin, V. I.
    Shkrebiy, P. P.
    [J]. SEMICONDUCTORS, 2008, 42 (12) : 1408 - 1412
  • [7] Giant burst of impact ionization in a p-n junction of the 6H-SiC polytype
    V. I. Sankin
    P. P. Shkrebiy
    [J]. Semiconductors, 2008, 42
  • [8] Planar, high voltage, boron implanted 6H-SiC P-N junction diodes
    Shenoy, PM
    Baliga, BJ
    [J]. SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 717 - 720
  • [9] Characterisation of deep level trap centres in 6H-SiC p-n junction diodes
    Ghaffour, K
    Lauer, V
    Souifi, A
    Guillot, G
    Raynaud, C
    Ortolland, S
    Iocatelli, ML
    Chante, JP
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 66 (1-3): : 106 - 110
  • [10] 4H-and 6H-SiC vertical static induction transistor with p-n junction as a gate
    Sankin, VI
    Shkrebiy, PP
    [J]. 2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 579 - 582
12345