Improved annealing process for 6H-SiC p+-n junction creation by Al implantation

被引：10
|
作者：
Lazar, M
Ottaviani, L
Locatelli, ML
Planson, D
Canut, B
Chante, JP
机构：
[1] INSA Lyon, CEGELY, UPRESA CNRS 5005, FR-69621 Villeurbanne, France
[2] Univ Lyon 1, UMR CNRS 5586, DPM, FR-69622 Villeurbanne, France
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
annealing; electrical activation; ion implantation; RBS/channeling; SIMS; surface stoichiometry;
D O I：
10.4028/www.scientific.net/MSF.338-342.921
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Five-fold Al implantations at both room temperature (RT) and 300 degreesC ranging from 25 keV to 300 keV with a total fluence of 1.75x10(15) cm(-2) have been performed in 6H-SiC epilayers to create p(+)-n junctions. The samples have been annealed at 1700 degreesC during 30 mn in an inductively heated furnace especially configured. Surface effects, recrystallization, dopant distribution and electrical activation are investigated by XPS, RES, SIMS and sheet resistance measurements. For both RT and 300 degreesC-implanted samples, good recrystallization and surface stoichiometry are found as well as no dopant loosing and an interesting electrical activation (46% and 99%, respectively).
引用
收藏
页码：921 / 924
页数：4
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