Post-implantation annealing of aluminum in 6H-SiC

Two double aluminum implantations at room temperature were performed in two p-type epitaxial 6H-SiC wafers, with a maximum energy of 320 keV and a total fluence of 1.6*10(15) cm(-2). The two samples were then annealed in a rf furnace at 1700 degrees C during 30 minutes, one with a SiC plate inside the reactor and the other without. RBS/C spectra were recorded on the implanted faces of each sample, before and after annealing. We observed that the implantation induced the amorphization of the material, and that the damaged layer of the sample annealed with the SiC plate was less extended in depth than the other. Moreover, the solid phase epitaxy appears to occur at two interfaces in the first case, that is the recrystallization arises from the volume and from the surface. The explanation of this phenomenon could be outlined from the XPS results, which show a better surface stoichiometry when the SiC plate is inside the reactor. This plate gives therefore interesting effects and improvements on the cristallinity and stoichiometry of the annealed sample.