Effects of hydrogen implantation and annealing on the vibrational properties of 6H-SiC

被引：4
|
作者：
Kunert, HW [1 ]
Maurice, TP
Hauser, T
Malherbe, JB
Prinsloo, LC
Brink, DJ
Falkovsky, LA
Camassel, J
机构：
[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
[2] Univ Montpellier 2, CNRS, Etud Semicond Grp, FR-34095 Montpellier 5, France
[3] Univ Pretoria, Dept Chem, ZA-0002 Pretoria, South Africa
[4] Landau Inst, Moscow, Russia
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
6H-SiC; annealing; hydrogen implantation; Raman spectroscopy;
D O I：
10.4028/www.scientific.net/MSF.353-356.275
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report 6H-SiC samples implanted with hydrogen at a dose of 1x10(17) H+ atom/cm(2), using a 1.0 MeV proton beam. Implantation-induced changes in vibration modes were investigated by backscattering Raman spectroscopy, Results have been discussed in the light of the extended zone scheme and some of the forbidden Br modes tentatively assigned. After 950 degreesC annealing during 1 hr, incomplete crystal recovery is found.
引用
收藏
页码：275 / 278
页数：4
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