Effects of surface defects on the performance of 4H-and 6H-SiC pn junction diodes

被引：13
|
作者：
Kimoto, T [1 ]
Miyamoto, N [1 ]
Matsunami, H [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷
关键词：
carrier lifetime; perimeter generation; pn diode; silicon carbide; surface recombination;
D O I：
10.1016/S0921-5107(98)00532-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effects of surface defects on performance of kV-class 4H- and 6H-SiC epitaxial mesa pn junction diodes were investigated. Mapping studies of surface morphological defects have revealed that triangular-shaped defects severely degrade high-blocking capability of the diodes whereas shallow round pits and scratch give no direct impact. The perimeter recombination and generation, instead of the bulk process, are responsible for forward recombination current and reverse leakage current of the diodes, respectively. Effective minority carrier lifetimes are mainly limited not by bulk recombination but by perimeter recombination. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：349 / 352
页数：4
相关论文
共 50 条
  • [1] Characterization of deep levels in 6H-SiC pn junction diodes
    Ghaffour, K
    Lauer, V
    Souifi, A
    Guillot, G
    Raynaud, C
    Ortolland, S
    Locatelli, ML
    Chante, JP
    [J]. 1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE, 1998, : 19 - 22
  • [2] Carbon-vacancy related defects in 4H-and 6H-SIC
    Son, NT
    Chen, WM
    Lindström, JL
    Monemar, B
    Janzén, E
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 202 - 206
  • [3] 4H-and 6H-SiC UV photodetectors
    Ostlund, Ludwig
    Wang, Qin
    Esteve, Romain
    Almqvist, Susanne
    Rihtnesberg, David
    Reshanov, Sergey
    Zhang, Andy Z. Z.
    Lim, Jang-Kwon
    Bakowski, Mietek
    Schoner, Adolf
    Kaplan, Wlodek
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1680 - 1682
  • [4] Junction barrier Schottky diodes in 4H-SiC and 6H-SiC
    Dahlquist, F
    Zetterling, CM
    Ostling, M
    Rottner, K
    [J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1061 - 1064
  • [5] Impact ionization coefficients of 4H-and 6H-SiC
    Sun, C. C.
    You, A. H.
    Wong, E. K.
    [J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 60 (01):
  • [6] Diffusion of light elements in 4H-and 6H-SiC
    Linnarsson, MK
    Janson, MS
    Karlsson, S
    Schöner, A
    Nordell, N
    Svensson, BG
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 275 - 280
  • [7] Impact ionization of nitrogen in 4H-and 6H-SiC
    Sankin, V. I.
    Petrov, A. G.
    Kaliteevski, M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (06)
  • [8] Temperature behavior of the 6H-SiC pn diodes
    Badila, M
    Chante, JP
    Locatelli, ML
    Millan, J
    Godignon, P
    Brezeanu, G
    Tudor, B
    Lebedev, A
    [J]. DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) : 341 - 345
  • [9] Electrical behavior of 6H-SiC pn diodes
    Badila, M
    Brezeanu, G
    Tudor, B
    Bica, G
    Lungu, P
    Millan, J
    Godignon, P
    Locatelli, ML
    Chante, JP
    [J]. CAS '97 PROCEEDINGS - 1997 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 20TH EDITION, VOLS 1 AND 2, 1997, : 285 - 288
  • [10] Electric characterization of 6H-SiC pn diodes
    [J]. Wang, S.-R., 2001, Science Press (22):
12345