Temperature behavior of the 6H-SiC pn diodes

被引：4
|
作者：
Badila, M [1 ]
Chante, JP
Locatelli, ML
Millan, J
Godignon, P
Brezeanu, G
Tudor, B
Lebedev, A
机构：
[1] IMT, Bucharest, Romania
[2] INSA Lyon, CEGELY, Lyon, France
[3] CNM, Barcelona, Spain
[4] Univ Politech, Bucharest 77206, Romania
[5] IOFFE, St Petersburg, Russia
来源：
DIAMOND AND RELATED MATERIALS | 1999年 / 8卷 / 2-5期
关键词：
6H-SiC pn junction; boron compensation; parameter extraction; temperature behavior;
D O I：
10.1016/S0925-9635(98)00389-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The temperature behavior of 6H-SiC pn junctions and the effect of boron compensation are investigated. At room temperature, boron doping induces a quasi-intrinsic region, resulting in an important increase of the breakdown voltage. At higher temperatures the boron effect is reduced. Using optimal extraction the temperature dependence of the saturation currents is analyzed. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：341 / 345
页数：5
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