Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes

被引：47
|
作者：
Kimoto, T [1 ]
Takemura, O
Matsunami, H
Nakata, T
Inoue, M
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 60601, Japan
[2] Ion Engn Res Inst Corp, Hirakata, Osaka 57301, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 04期
关键词：
acceptor doping; electrical activation; ion implantation; pn junction diode; silicon carbide;
D O I：
10.1007/s11664-998-0415-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Aluminum (Al) and boron (B) ion implantations at room temperature into n-type 6H-SiC epilayers have been investigated. Rutherford backscattering spectroscopy (RBS) channeling measurements revealed larger lattice damage in Al+ implantation at a given total implantation dose. A nearly perfect electrical activation ratio (>90%) could be attained by high-temperature annealing at 1600 degrees C for Al+ and 1700 degrees C for B+ implantations. Mesa pn junction diodes formed by either Al+ or B+ implantation with a 1 x 10(14) cm(-2) dose exhibited high blocking voltages of 950 similar to 1070 V, which are 80 similar to 90% of the ideal value predicted for the diode structure. The forward current can clearly be divided into two components of diffusion and recombination currents. B+-implanted diodes showed higher breakdown voltage on average but poor forward conduction. Comparison of the performance of Al+ and B+-implanted diodes is discussed.
引用
收藏
页码：358 / 364
页数：7
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