Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes

被引：12
|
作者：
Zhang, Q [1 ]
Madangarli, V [1 ]
Tarplee, M [1 ]
Sudarshan, TS [1 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 03期
关键词：
6H-SiC; Schottky diodes; I-V characteristics;
D O I：
10.1007/s11664-001-0015-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current-voltage (I-V) characteristics of n- and p-type 6H-SiC Schottky diodes are compared in a temperature range of room temperature to 400 degreesC. While the room temperature I-V characteristics of the n-type Schottky diode after turn-on is more or less linear up to similar to 100 A/cm(2), the T-V characteristics of the p-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities (>125 A/cm(2)) the forward voltage drop across p-type Schottky diodes is lower than that across n-type Schottky diodes on 6H-SiC. High temperature measurements indicate that while the on-state resistance of n-type Schottky diodes increases with increase in temperature, the on-state resistance of p-type Schottky diodes decreases with increase in temperature up to similar to 330 K.
引用
收藏
页码：196 / 201
页数：6
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