High voltage Schottky barrier diodes on p-type 4H and 6H-SiC

Schottky barrier diodes with goad rectifying characteristics upto temperatures as high as 250 C have been successfully fabricated for the first time on p-type 4H-SiC and 6H-SiC using Ti as the barrier metal. The barrier heights were extracted at room temperatures using both I-V and C-V measurements and found to be 1.8 - 2.0 eV for 6H-SiC and 1.4 - 1.5 eV for 4H-SiC. The specific series resistances (R-s,R-sp) for 4H- and 6H-SiC calculated from a plot of IdV/dI vs V were found to be 25 m Omega cm(-2) and 70 m Omega cm(-2) at room temperature and found to decrease with increasing temperatures.