Current-voltage characteristics of large area 6H-SiC pin diodes

被引：3

作者：

Badila, M

Tudor, B

Brezeanu, G

Locatelli, ML

Chante, JP

Millan, J

Godignon, P

Lebedev, A

Banu, V

机构：

[1] IMT, Bucharest, Romania

[2] Univ POLYTECHNICA, Bucharest, Romania

[3] INSA Lyon, CEGELY, Lyon, France

[4] CNM, Barcelona, Spain

[5] IOFFE Inst, St Petersburg, Russia

[6] Baneasa SA, Bucharest, Romania

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

SiC pn junction; boron compensation; current-voltage characteristics; parameter extraction; saturation currents; breakdown voltage;

D O I：

10.1016/S0921-5107(98)00549-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent improvements in SiC substrate and epilayer quality have enabled the fabrication of devices with high voltage blocking capabilities. Boron compensation of a n-type base layer is often used in pn high voltage SIC diodes. In the case of large area devices, defects causing premature breakdown come into view. This paper reports 6H-SiC boron compensated (BC) pn junctions, having an experimental maximum breakdown voltage of 900 V for diodes with area up to 0.72 mm(2). The current-voltage (I-V) characteristics of the structures are modeled and characterized and comparison with similar but uncompensated junctions is made. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：433 / 436

页数：4

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