Current-voltage characteristics of Cr/SiC(4H) Schottky diodes

被引：0
|
作者：
Strelchuk, A. M. [1 ]
Kalinina, E. V. [1 ]
机构：
[1] Ioffe Inst, St Petersburg, Russia
来源：
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 01期
关键词：
SiC; Schottky diodes; current-voltage characteristics; spread; defects; BARRIER-HEIGHT INHOMOGENEITY; ELECTRICAL CHARACTERISTICS; EXCESS CURRENTS;
D O I：
10.18721/JPM.161.212
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Forward and reverse current-voltage characteristics (I-V) of Cr/SiC(4H) Schottky diodes (SDs) manufactured using the same technology based on a single weakly-doped (similar to 4.10(14) cm(-3)) epilayer are investigated. SDs are close to ideal, but a significant spread of I-V and excess current which sometimes unstable were found, unrelated to the difference in the area of the SDs. Investigation in the temperature range 20-210 degrees C revealed the annealing effect and allowed to estimate the potential barrier height of different diodes before and after annealing. It is suggested that the main diode is shunted by a parasitic diode, which determines forward I-V in the region of I-V exponential dependence.
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页码：83 / 89
页数：7
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