A Finite Element Model for Bipolar Resistive Random Access Memory

被引：7
|
作者：
Kim, Kwanyong [1 ]
Lee, Kwangseok [1 ]
Lee, Keun-Ho [1 ]
Park, Young-Kwan [1 ]
Choi, Woo Young [1 ]
机构：
[1] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2014年 / 14卷 / 03期
关键词：
Realistic cell structure optimization; finite element method (FEM); bipolar resistive random access memory (RRAM);
D O I：
10.5573/JSTS.2014.14.3.268
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The forming, reset and set operation of bipolar resistive random access memory (RRAM) have been predicted by using a finite element (FE) model which includes interface effects. To the best of our knowledge, our bipolar RRAM model is applicable to realistic cell structure optimization because our model is based on the FE method (FEM) unlike precedent models.
引用
收藏
页码：268 / 273
页数：6
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