Operation methods of resistive random access memory

被引：0
|
作者：
GuoMing Wang
ShiBing Long
MeiYun Zhang
Yang Li
XiaoXin Xu
HongTao Liu
Ming Wang
PengXiao Sun
HaiTao Sun
Qi Liu
HangBing Lü
BaoHe Yang
Ming Liu
机构：
[1] Tianjin University of Technology,Tianjin Key Laboratory of Film Electronic and Communication Devices
[2] Chinese Academy of Sciences,Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics
来源：
Science China Technological Sciences | 2014年 / 57卷
关键词：
resistive random access memory; operation method; voltage sweeping mode; current sweeping mode; constant current stress; constant voltage stress; rectangular pulse mode; triangle pulse mode;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM). Meanwhile, the effects of these measurement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summarized and analyzed.
引用
收藏
页码：2295 / 2304
页数：9
相关论文
共 50 条
  • [1] Operation methods of resistive random access memory
    WANG Guo Ming
    LONG Shi Bing
    ZHANG Mei Yun
    LI Yang
    XU Xiao Xin
    LIU Hong Tao
    WANG Ming
    SUN Peng Xiao
    SUN Hai Tao
    LIU Qi
    L Hang Bing
    YANG Bao He
    LIU Ming
    [J]. Science China(Technological Sciences), 2014, (12) - 2304
  • [2] Operation methods of resistive random access memory
    WANG Guo Ming
    LONG Shi Bing
    ZHANG Mei Yun
    LI Yang
    XU Xiao Xin
    LIU Hong Tao
    WANG Ming
    SUN Peng Xiao
    SUN Hai Tao
    LIU Qi
    Lü Hang Bing
    YANG Bao He
    LIU Ming
    [J]. Science China Technological Sciences, 2014, 57 (12) : 2295 - 2304
  • [3] Operation methods of resistive random access memory
    Wang GuoMing
    Long ShiBing
    Zhang MeiYun
    Li Yang
    Xu XiaoXin
    Liu HongTao
    Wang Ming
    Sun PengXiao
    Sun HaiTao
    Liu Qi
    Lu HangBing
    Yang BaoHe
    Liu Ming
    [J]. SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2014, 57 (12) : 2295 - 2304
  • [4] Access Strategies for Resistive Random Access Memory (RRAM)
    Chen, F. T.
    Chen, Y. -S.
    Lee, H. -Y.
    Chen, W. -S.
    Gu, P. -Y.
    Wu, T. -Y.
    Tsai, C. -H.
    Liao, Y. -Y.
    Chen, P. -S.
    Shyuan, S. -S.
    Chiu, P. -F.
    Lin, W. -P.
    Lin, C. -H.
    Tsai, M. -J.
    Ku, T. -K.
    [J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012), 2012, 44 (01): : 73 - 78
  • [5] In Memory Energy Application for Resistive Random Access Memory
    Trotti, Paola
    Oukassi, Sami
    Molas, Gabriel
    Bernard, Mathieu
    Aussenac, Francois
    Pillonnet, Gael
    [J]. ADVANCED ELECTRONIC MATERIALS, 2021, 7 (12):
  • [6] Insertion of a Si layer to reduce operation current for resistive random access memory applications
    Chen, Yu-Ting
    Chang, Ting-Chang
    Peng, Han-Kuang
    Tseng, Hsueh-Chih
    Huang, Jheng-Jie
    Yang, Jyun-Bao
    Chu, Ann-Kuo
    Young, Tai-Fa
    Sze, Simon M.
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (25)
  • [7] An overview of resistive random access memory devices
    LI YingTao 1
    2 Laboratory of Nano-Fabrication and Novel Device Integration
    [J]. Science Bulletin, 2011, (Z2) : 3072 - 3078
  • [8] All Nonmetal Resistive Random Access Memory
    Yen, Te Jui
    Gismatulin, Andrei
    Volodin, Vladimir
    Gritsenko, Vladimir
    Chin, Albert
    [J]. SCIENTIFIC REPORTS, 2019, 9 (1)
  • [9] Conductance Quantization in Resistive Random Access Memory
    Yang Li
    Shibing Long
    Yang Liu
    Chen Hu
    Jiao Teng
    Qi Liu
    Hangbing Lv
    Jordi Suñé
    Ming Liu
    [J]. Nanoscale Research Letters, 2015, 10
  • [10] An overview of resistive random access memory devices
    Li YingTao
    Long ShiBing
    Liu Qi
    Lu HangBing
    Liu Su
    Liu Ming
    [J]. CHINESE SCIENCE BULLETIN, 2011, 56 (28-29): : 3072 - 3078
12345