Operation methods of resistive random access memory

被引：0

作者：

WANG Guo Ming ^{[1
,2
]}

LONG Shi Bing ^{[2
]}

ZHANG Mei Yun ^{[2
]}

LI Yang ^{[2
]}

XU Xiao Xin ^{[2
]}

LIU Hong Tao ^{[1
,2
]}

WANG Ming ^{[2
]}

SUN Peng Xiao ^{[2
]}

SUN Hai Tao ^{[2
]}

LIU Qi ^{[2
]}

Lü Hang Bing ^{[2
]}

YANG Bao He ^{[1
]}

LIU Ming ^{[2
]}

机构：

[1] Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology

[2] Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences

来源：

Science China Technological Sciences | 2014年 / 57卷 / 12期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

resistive random access memory; operation method; voltage sweeping mode; current sweeping mode; constant current stress; constant voltage stress; rectangular pulse mode; triangle pulse mode;

D O I：

暂无

中图分类号：

TP333 [存贮器];

学科分类号：

081201 ;

摘要：

In this paper, different electrical measurement and operation methods of resistive random access memory(RRAM) have been summarized, including voltage sweeping mode(VSM), current sweeping mode(CSM), constant current stress(CCS), constant voltage stress(CVS), rectangular pulse mode(RPM), and triangle pulse mode(TPM). Meanwhile, the effects of these measurement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summarized and analyzed.

引用

页码：2295 / 2304

页数：10

共 50 条

[1] Operation methods of resistive random access memory
GuoMing Wang
ShiBing Long
MeiYun Zhang
Yang Li
XiaoXin Xu
HongTao Liu
Ming Wang
PengXiao Sun
HaiTao Sun
Qi Liu
HangBing Lü
BaoHe Yang
Ming Liu
[J]. Science China Technological Sciences, 2014, 57 : 2295 - 2304
[2] Operation methods of resistive random access memory
WANG Guo Ming
LONG Shi Bing
ZHANG Mei Yun
LI Yang
XU Xiao Xin
LIU Hong Tao
WANG Ming
SUN Peng Xiao
SUN Hai Tao
LIU Qi
L Hang Bing
YANG Bao He
LIU Ming
[J]. Science China(Technological Sciences), 2014, (12) - 2304
[3] Operation methods of resistive random access memory
Wang GuoMing
Long ShiBing
Zhang MeiYun
Li Yang
Xu XiaoXin
Liu HongTao
Wang Ming
Sun PengXiao
Sun HaiTao
Liu Qi
Lu HangBing
Yang BaoHe
Liu Ming
[J]. SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2014, 57 (12) : 2295 - 2304
[4] Access Strategies for Resistive Random Access Memory (RRAM)
Chen, F. T.
Chen, Y. -S.
Lee, H. -Y.
Chen, W. -S.
Gu, P. -Y.
Wu, T. -Y.
Tsai, C. -H.
Liao, Y. -Y.
Chen, P. -S.
Shyuan, S. -S.
Chiu, P. -F.
Lin, W. -P.
Lin, C. -H.
Tsai, M. -J.
Ku, T. -K.
[J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012), 2012, 44 (01): : 73 - 78
[5] In Memory Energy Application for Resistive Random Access Memory
Trotti, Paola
Oukassi, Sami
Molas, Gabriel
Bernard, Mathieu
Aussenac, Francois
Pillonnet, Gael
[J]. ADVANCED ELECTRONIC MATERIALS, 2021, 7 (12):
[6] Insertion of a Si layer to reduce operation current for resistive random access memory applications
Chen, Yu-Ting
Chang, Ting-Chang
Peng, Han-Kuang
Tseng, Hsueh-Chih
Huang, Jheng-Jie
Yang, Jyun-Bao
Chu, Ann-Kuo
Young, Tai-Fa
Sze, Simon M.
[J]. APPLIED PHYSICS LETTERS, 2013, 102 (25)
[7] An overview of resistive random access memory devices
LI YingTao 1
2 Laboratory of Nano-Fabrication and Novel Device Integration
[J]. Science Bulletin, 2011, (Z2) : 3072 - 3078
[8] All Nonmetal Resistive Random Access Memory
Yen, Te Jui
Gismatulin, Andrei
Volodin, Vladimir
Gritsenko, Vladimir
Chin, Albert
[J]. SCIENTIFIC REPORTS, 2019, 9 (1)
[9] Conductance Quantization in Resistive Random Access Memory
Yang Li
Shibing Long
Yang Liu
Chen Hu
Jiao Teng
Qi Liu
Hangbing Lv
Jordi Suñé
Ming Liu
[J]. Nanoscale Research Letters, 2015, 10
[10] An overview of resistive random access memory devices
Li YingTao
Long ShiBing
Liu Qi
Lu HangBing
Liu Su
Liu Ming
[J]. CHINESE SCIENCE BULLETIN, 2011, 56 (28-29): : 3072 - 3078

← 1 2 3 4 5 →