A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

被引：28
|
作者：
Lu, Yang [1 ]
Gao, Bin [1 ]
Fu, Yihan [1 ]
Chen, Bing [1 ]
Liu, Lifeng [1 ]
Liu, Xiaoyan [1 ]
Kang, Jinfeng [1 ]
机构：
[1] Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 03期
基金：
美国国家科学基金会;
关键词：
Conductive filament (CF); hafnium oxide; non-volatile memory; RESET time; resistive switching; resistive random access memory (RRAM); MECHANISM;
D O I：
10.1109/LED.2011.2178229
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random access memory (RRAM). In this model, the analytical expressions of the RESET time of RRAM devices and the correlated resistance in high-resistance states (R-HRS) are presented and experimentally verified. Based on the extracted physical-based model parameters from measured data, the resistive switching characteristics of oxide-based RRAM devices can be evaluated.
引用
收藏
页码：306 / 308
页数：3
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