Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics

被引：2
|
作者：
Ryoo, Kyung-Chang [1 ,2 ,3 ]
Oh, Jeong-Hoon [1 ,2 ,3 ]
Jung, Sunghun [1 ,2 ]
Jeong, Hongsik [3 ]
Park, Byung-Gook [1 ,2 ]
机构：
[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
[3] Samsung Elect Co Ltd, Semicond Business, Memory Div, DRAM Proc Architecture Team, Yongin 445701, Gyeonggi, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期
关键词：
TRANSITION; MODEL;
D O I：
10.1143/JJAP.51.04DD14
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new technical improvement in understanding the resistive switching characteristics of unipolar resistive random access memory (RRAM) is investigated. It is possible to minimize reset current (I-RESET), set voltage variation, and forming voltage (V-FORMING), which results in a wide sensing margin and high density applications by using a conducting filament (CF) minimized structure up to a 10 nm technology node. Its structural advantages enable I-RESET to be tuned with excellent manufacturability. Numerical simulation is also performed using a random circuit breaker (RCB) model, showing that the proposed structure elucidates the resistive switching improvement. (C) 2012 The Japan Society of Applied Physics
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页数：5
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