Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics

被引：2

作者：

Ryoo, Kyung-Chang ^{[1
,2
,3
]}

Oh, Jeong-Hoon ^{[1
,2
,3
]}

Jung, Sunghun ^{[1
,2
]}

Jeong, Hongsik ^{[3
]}

Park, Byung-Gook ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

[3] Samsung Elect Co Ltd, Semicond Business, Memory Div, DRAM Proc Architecture Team, Yongin 445701, Gyeonggi, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期

关键词：

TRANSITION; MODEL;

D O I：

10.1143/JJAP.51.04DD14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technical improvement in understanding the resistive switching characteristics of unipolar resistive random access memory (RRAM) is investigated. It is possible to minimize reset current (I-RESET), set voltage variation, and forming voltage (V-FORMING), which results in a wide sensing margin and high density applications by using a conducting filament (CF) minimized structure up to a 10 nm technology node. Its structural advantages enable I-RESET to be tuned with excellent manufacturability. Numerical simulation is also performed using a random circuit breaker (RCB) model, showing that the proposed structure elucidates the resistive switching improvement. (C) 2012 The Japan Society of Applied Physics

引用

页数：5

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