Resistive switching characteristics of HfO2 based resistive random access memory (RRAM) using ITO electrode

被引：0
|
作者：
He, Pin [1 ]
Ye, Cong [1 ]
Deng, Tengfei [1 ]
Wu, Jiaji [1 ]
Zhang, Junchi [1 ]
Wang, Hao [1 ]
机构：
[1] Faculty of Physics and Electronic Technology, Hubei University, Wuhan,430062, China
来源：
Xiyou Jinshu/Chinese Journal of Rare Metals | 2016年 / 40卷 / 03期
关键词：
D O I：
10.13373/j.cnki.cjrm.2016.03.007
中图分类号：
学科分类号：
摘要：
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页码：236 / 242
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