Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

被引：173

作者：

Lanza, M. ^{[1
]}

Zhang, K. ^{[2
]}

Porti, M. ^{[1
]}

Nafria, M. ^{[1
]}

Shen, Z. Y. ^{[2
]}

Liu, L. F. ^{[3
]}

Kang, J. F. ^{[3
]}

Gilmer, D. ^{[4
]}

Bersuker, G. ^{[4
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[3] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[4] SEMATECH, Austin, TX 78741 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期

基金：

中国国家自然科学基金;

关键词：

BREAKDOWN;

D O I：

10.1063/1.3697648

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resistive switching (RS) phenomenon in the HfO2 dielectric has been indirectly observed at device level in previous studies using metal-insulator-metal structures, but its origin remains unclear. In this work, using the enhanced conductive atomic force microscope (ECAFM), we have been able to obtain in situ direct observation of RS with nanometric resolution. The ECAFM measurements reveal that the conductive filaments exhibiting the RS are primarily formed at the grain boundaries, which were shown exhibiting especially low breakdown voltage due to their intrinsic high density of the oxygen vacancies. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697648]

引用

页数：4

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