Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

被引：51

作者：

Liu, Xinjun ^{[1
]}

Sadaf, Sharif Md. ^{[2
]}

Park, Sangsu ^{[3
]}

Kim, Seonghyun ^{[1
]}

Cha, Euijun ^{[4
]}

Lee, Daeseok ^{[4
]}

Jung, Gun-Young ^{[1
]}

Hwang, Hyunsang ^{[4
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada

[3] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[4] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Complementary resistive switch (CRS); crossbar array; nonvolatile memory; resistive memory; resistive random access memory (RRAM);

D O I：

10.1109/LED.2012.2235816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the applications of resistive random access memory (RRAM), we study the complementary resistive switch (CRS) behavior of a bilayer Nb2O5-x/NbOy RRAM. The CRS effect is explained by the redistribution of oxygen vacancies inside the two niobium oxide layers. Improved CRS effects were observed using W top electrode (TE) instead of Pt, which can be attributed to the oxygen barrier layer derived from a self-formed WOx layer between the W TE and the Nb2O5-x oxide film. The niobium oxide-based CRS devices within a single memory cell can be directly integrated into a crossbar memory array without the need of extra diodes; this can significantly reduce the fabrication complexity.

引用

页码：235 / 237

页数：3

共 50 条

[1] Complementary resistive switching in tantalum oxide-based resistive memory devices
Yang, Yuchao
Sheridan, Patrick
Lu, Wei
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (20)
[2] Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices
Koveshnikov, Sergei
Kononenko, Oleg
Soltanovich, Oleg
Kapitanova, Olesya
Knyazev, Maxim
Volkov, Vladimir
Yakimov, Eugene
[J]. NANOMATERIALS, 2022, 12 (20)
[3] A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices
Lu, Yang
Gao, Bin
Fu, Yihan
Chen, Bing
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
[J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) : 306 - 308
[4] Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory
Nardi, Federico
Balatti, Simone
Larentis, Stefano
Gilmer, David C.
Ielmini, Daniele
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 70 - 77
[5] Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device
Shi, Kaixi
Wang, Zhongqiang
Xu, Haiyang
Xu, Zhe
Zhang, Xiaohan
Zhao, Xiaoning
Liu, Weizhen
Yang, Guochun
Liu, Yichun
[J]. IEEE ELECTRON DEVICE LETTERS, 2018, 39 (04) : 488 - 491
[6] Scaling of oxide-based resistive switching devices
Ielmini, D.
Ambrogio, S.
Balatti, S.
[J]. 2014 14TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS), 2014,
[7] Resistive switching properties of alkaline earth oxide-based memory devices
Lee, Ke-Jing
Chang, Yu-Chi
Lee, Cheng-Jung
Wang, Li-Wen
Wang, Yeong-Her
[J]. MICROELECTRONICS RELIABILITY, 2018, 83 : 281 - 285
[8] Conductance quantization in oxide-based resistive switching devices
Duan, Qingxi
Li, Jingxian
Zhu, Jiadi
Zhang, Teng
Yang, Jingjing
Yang, Yuchao
Huang, Ru
[J]. 2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2019,
[9] Binary metal oxide-based resistive switching memory devices: A status review
Patil, Amitkumar R.
Dongale, Tukaram D.
Kamat, Rajanish K.
Rajpure, Keshav Y.
[J]. MATERIALS TODAY COMMUNICATIONS, 2023, 34
[10] Resistive switching and diode properties of mesoscopic niobium oxide-based structures
Tulina N.A.
Rossolenko A.N.
Borisenko I.Y.
Shmytko I.M.
Ionov A.M.
Ivanov A.A.
[J]. Bulletin of the Russian Academy of Sciences: Physics, 2015, 79 (6) : 759 - 762

← 1 2 3 4 5 →