Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices

被引：51
|
作者：
Liu, Xinjun [1 ]
Sadaf, Sharif Md. [2 ]
Park, Sangsu [3 ]
Kim, Seonghyun [1 ]
Cha, Euijun [4 ]
Lee, Daeseok [4 ]
Jung, Gun-Young [1 ]
Hwang, Hyunsang [4 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[2] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
[3] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea
[4] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
Complementary resistive switch (CRS); crossbar array; nonvolatile memory; resistive memory; resistive random access memory (RRAM);
D O I：
10.1109/LED.2012.2235816
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the applications of resistive random access memory (RRAM), we study the complementary resistive switch (CRS) behavior of a bilayer Nb2O5-x/NbOy RRAM. The CRS effect is explained by the redistribution of oxygen vacancies inside the two niobium oxide layers. Improved CRS effects were observed using W top electrode (TE) instead of Pt, which can be attributed to the oxygen barrier layer derived from a self-formed WOx layer between the W TE and the Nb2O5-x oxide film. The niobium oxide-based CRS devices within a single memory cell can be directly integrated into a crossbar memory array without the need of extra diodes; this can significantly reduce the fabrication complexity.
引用
收藏
页码：235 / 237
页数：3
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