A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

被引：38

作者：

Chen, B. ^{[1
,2
]}

Gao, B. ^{[2
]}

Sheng, S. W. ^{[2
]}

Liu, L. F. ^{[2
]}

Liu, X. Y. ^{[2
]}

Chen, Y. S. ^{[2
]}

Wang, Y. ^{[2
]}

Han, R. Q. ^{[2
]}

Yu, B. ^{[3
]}

Kang, J. F. ^{[2
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[3] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期

基金：

美国国家科学基金会;

关键词：

Conductive filament; RESET current; resistive random access memory (RRAM); resistive switching; uniformity; variation;

D O I：

10.1109/LED.2010.2101577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new operation scheme on oxide-based resistive-switching devices [resistive random access memory (RRAM)] is proposed to improve the controllability of switching processes in order to achieve an improved memory performance. The improved device-to-device and cycle-to-cycle uniformity, reduced RESET current, and adjustable R-HRS/R-LRS ratio are demonstrated in the HfOx-based RRAM devices by using the new operation scheme, indicating the validity of the new operation scheme. The physical mechanism accounting for the new operation scheme effect is discussed.

引用

页码：282 / 284

页数：3

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