Bipolar resistive switching of chromium oxide for resistive random access memory

被引：34
|
作者：
Chen, Shih-Cheng [2 ,3 ]
Chang, Ting-Chang [1 ,4 ]
Chen, Shih-Yang [2 ,3 ]
Chen, Chi-Wen [1 ]
Chen, Shih-Ching [1 ]
Sze, S. M. [5 ]
Tsai, Ming-Jinn [6 ]
Kao, Ming-Jer [6 ]
Huang, Fon-Shan Yeh [2 ,3 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan
[3] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu, Taiwan
[4] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[6] Elect & Optoelect Res Lab ITRI, Nanoelect Technol Div, Hsinchu 31040, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2011年 / 62卷 / 01期
关键词：
Cr2O3 thin film; Resistance switching; Nonvolatile memory;
D O I：
10.1016/j.sse.2010.12.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study investigates the resistance switching characteristics of Cr2O3-based resistance random access memory (RRAM) with Pt/Cr2O3/TiN and Pt/Cr2O3/Pt structures. Only devices with Pt/Cr2O3/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr2O3 and TiN was observed clearly before and after resistance switching from Auger electron spectroscopy (AES) analysis. Both low resistance state, ON state, and high resistance state, OFF state, of Pt/Cr2O3/TiN structures are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 10(2), on top of that, the retention properties of both states are very stable after 10(4) s with a voltage of -0.2 V. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：40 / 43
页数：4
相关论文
共 50 条
  • [1] Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory
    Yang, Fann-Wei
    Chen, Kai-Huang
    Cheng, Chien-Min
    Su, Feng-Yi
    [J]. CERAMICS INTERNATIONAL, 2013, 39 : S729 - S732
  • [2] Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
    Chen, Min-Chen
    Chang, Ting-Chang
    Huang, Sheng-Yao
    Chen, Shih-Ching
    Hu, Chih-Wei
    Tsai, Chih-Tsung
    Sze, Simon M.
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) : II191 - II193
  • [3] Investigation of Resistive Switching in Bipolar TaOx-based Resistive Random Access Memory
    Zhuo, V. Y. -Q.
    Jiang, Y.
    Sze, J. Y.
    Zhang, Z.
    Pan, J. S.
    Zhao, R.
    Shi, L. P.
    Chong, T. C.
    Robertson, J.
    [J]. 2012 12TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, 2012, : 64 - 67
  • [4] Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory
    Park, Sung Pyo
    Tak, Young Jun
    Kim, Hee Jun
    Lee, Jin Hyeok
    Yoo, Hyukjoon
    Kim, Hyun Jae
    [J]. ADVANCED MATERIALS, 2018, 30 (26)
  • [5] Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
    Chen, Shih-Cheng
    Chang, Ting-Chang
    Chen, Shih-Yang
    Li, Hung-Wei
    Tsai, Yu-Ting
    Chen, Chi-Wen
    Sze, S. M.
    Yeh, Fon-Shan
    Tai, Ya-Hsiang
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (02) : H103 - H106
  • [6] Resistive Switching of Plasma-Treated Zinc Oxide Nanowires for Resistive Random Access Memory
    Lai, Yunfeng
    Qiu, Wenbiao
    Zeng, Zecun
    Cheng, Shuying
    Yu, Jinling
    Zheng, Qiao
    [J]. NANOMATERIALS, 2016, 6 (01):
  • [7] Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations
    Makarov, A.
    Sverdlov, V.
    Selberherr, S.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
  • [8] A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices
    Lu, Yang
    Gao, Bin
    Fu, Yihan
    Chen, Bing
    Liu, Lifeng
    Liu, Xiaoyan
    Kang, Jinfeng
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) : 306 - 308
  • [9] Bipolar Resistive Switching Characteristics of TiN/HfOx/ITO Devices for Resistive Random Access Memory Applications
    Tan Ting-Ting
    Chen Xi
    Guo Ting-Ting
    Liu Zheng-Tang
    [J]. CHINESE PHYSICS LETTERS, 2013, 30 (10)
  • [10] Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices
    Kim, Myung Ju
    Jeon, Dong Su
    Park, Ju Hyun
    Kim, Tae Geun
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (20)
12345