Compact Modeling of Quantization Effects for Cylindrical Gate-All-Around MOSFETs

被引：1
|
作者：
Cousin, Bastien [1 ,2 ]
Rozeau, Olivier [1 ]
Jaud, Marie-Anne [1 ]
Jomaah, Jalal [2 ]
机构：
[1] CEA, LETI, MINATEC, F-38054 Grenoble, France
[2] IMEP, MINATEC, INPG, F-38016 Grenoble, France
来源：
ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON | 2009年
关键词：
Cylindrical nanowire gate-all-around (GAA) MOSFET; compact modeling; quantum-mechanical effects (QME); THRESHOLD VOLTAGE; INVERSION LAYERS; MOBILITY;
D O I：
10.1109/ULIS.2009.4897588
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time, a continuous analytical model of quantum-mechanical effects for cylindrical undoped Si-Nanowire MOSFETs is presented in this paper. By using a variational approach, this model is suitable for both structural and electrical confinement of carriers in the nanowire. This whole explicit model is developed in order to be integrated into a surface-potential-based model. The analytical model shows excellent agreement with numerical simulations and results concerning current-voltage (I-V) characteristics demonstrate the application of our compact model to circuit simulation.
引用
收藏
页码：269 / +
页数：2
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