Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs

被引：14
|
作者：
Conrad, Nathan [1 ]
Shin, SangHong
Gu, Jiangjiang
Si, Mengwei
Wu, Heng
Masuduzzaman, Muhammad
Alam, Mohammad A.
Ye, Peide D.
机构：
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2013年 / 13卷 / 04期
基金：
美国国家科学基金会;
关键词：
Gate-all-around; InGaAs; MOSFET; nanowire; NOISE; SI;
D O I：
10.1109/TDMR.2013.2283854
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Furthering Si CMOS scaling requires development of high-mobility channel materials and advanced device structures to improve the electrostatic control. We demonstrate the fabrication of gate-all-around (GAA) indium gallium arsenide (InGaAs) MOSFETs with highly scaled atomic-layer-deposited gate dielectrics. InGaAs, with its high electron mobility, allows higher drive currents and other on-state performance compared to silicon. The GAA structure provides superior electrostatic control of the MOSFET channel with outstanding off-state performance. A subthreshold slope of 72 mV/dec, electron mobility of 764 cm(2)/V . s, and an on-current of 1.59 mA/mu m are demonstrated, for example. Variability studies on on-state and off-state performances caused by the number of nanowire channels are also presented.
引用
收藏
页码：489 / 496
页数：8
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