Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb

被引：0
|
作者：
Ikossi, K [1 ]
Goldenberg, M [1 ]
Mittereder, J [1 ]
机构：
[1] USN, Res Lab, Microwave Technol Branch, Div Elect Sci & Technol, Washington, DC 20375 USA
来源：
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISDRS.2001.984488
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：252 / 255
页数：4
相关论文
共 50 条
  • [1] Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb
    Ikossi, K
    Goldenberg, M
    Mittereder, J
    SOLID-STATE ELECTRONICS, 2002, 46 (10) : 1627 - 1631
  • [2] Ohmic contacts to n-type GaSb and n-type GaInAsSb
    Huang, RK
    Wang, CA
    Harris, CT
    Connors, MK
    Shiau, DA
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (11) : 1406 - 1410
  • [3] Ohmic contacts to n-type GaSb and n-type GalnAsSb
    Robin K. Huang
    Christine A. Wang
    Christopher T. Harris
    Michael K. Connors
    Daniel A. Shiau
    Journal of Electronic Materials, 2004, 33 : 1406 - 1410
  • [4] Ohmic contacts to n-type and p-type GaSB
    Subekti, A
    Chin, VWL
    Tansley, TL
    SOLID-STATE ELECTRONICS, 1996, 39 (03) : 329 - 332
  • [5] OHMIC CONTACTS TO P-TYPE AND N-TYPE GASB
    HEINZ, C
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1983, 54 (02) : 247 - 254
  • [6] LOW-NOISE OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB
    ROLLAND, M
    GAILLARD, S
    VILLEMAIN, E
    RIGAUD, D
    VALENZA, M
    JOURNAL DE PHYSIQUE III, 1993, 3 (09): : 1825 - 1832
  • [7] Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC
    V. I. Egorkin
    V. E. Zemlyakov
    A. V. Nezhentsev
    V. A. Gudkov
    V. I. Garmash
    Semiconductors, 2019, 53 : 2012 - 2015
  • [8] CHARACTERIZATION OF OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB
    VILLEMAIN, E
    GAILLARD, S
    ROLLAND, M
    JOULLIE, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (1-2): : 162 - 164
  • [9] Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC
    Egorkin, V. I.
    Zemlyakov, V. E.
    Nezhentsev, A. V.
    Gudkov, V. A.
    Garmash, V. I.
    SEMICONDUCTORS, 2019, 53 (15) : 2012 - 2015
  • [10] Ohmic contacts to n-type germanium with low specific contact resistivity
    Gallacher, K.
    Velha, P.
    Paul, D. J.
    MacLaren, I.
    Myronov, M.
    Leadley, D. R.
    APPLIED PHYSICS LETTERS, 2012, 100 (02)
12345