Ohmic contacts to n-type germanium with low specific contact resistivity

被引：84
|
作者：
Gallacher, K. [1 ]
Velha, P. [1 ]
Paul, D. J. [1 ]
MacLaren, I. [2 ]
Myronov, M. [3 ]
Leadley, D. R. [3 ]
机构：
[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
[2] Univ Glasgow, Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 02期
基金：
英国工程与自然科学研究理事会;
关键词：
LAYERS;
D O I：
10.1063/1.3676667
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.361.8) x 10(-7) Omega-cm(2) for anneal temperatures of 340 degrees C. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676667]
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页数：3
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