Low Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process

被引：5
|
作者：
Gallacher, K. [1 ]
Velha, P. [1 ]
Paul, D. J. [1 ]
MacLaren, I. [2 ]
Myronov, M. [3 ]
Leadley, D. R. [3 ]
机构：
[1] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland
[2] Univ Glasgow, Univ Ave, Sch Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1149/05009.1081ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The lowest specific contact resistivity demonstrated was (1.68 +/- 0.4) x 10(-7) Omega-cm(2), with a low transfer length of (0.95 +/- 0.12) for deposited Ni and Ge annealed at 340 degrees C for 30 s on n-Ge with a doping density of 3 x 10(19) cm(-3).
引用
收藏
页码：1081 / 1084
页数：4
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