CHARACTERIZATION OF OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB

被引：10
|
作者：
VILLEMAIN, E [1 ]
GAILLARD, S [1 ]
ROLLAND, M [1 ]
JOULLIE, A [1 ]
机构：
[1] UNIV MONTPELLIER 2,EQUIPE MICROOPTOELECTR MONTPELLIER,CNRS,UA 392,F-34095 MONTPELLIER 5,FRANCE
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 20卷 / 1-2期
关键词：
D O I：
10.1016/0921-5107(93)90419-N
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ohmic contacts on GaSb were achieved using Zn-Au multilayers for p-type GaSb and Te-Au multilayers for n-type GaSb. Contacts were electrically characterized by their specific resistance, which could be obtained currently as low as 10(-5) OMEGA CM2 for p-type GaSb and 10(-6) OMEGA CM2 for n-type GaSb. The surface composition was studied by means of secondary ion mass spectrometry, which showed that interface alloying gives the best results.
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收藏
页码：162 / 164
页数：3
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