LOW-NOISE OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB

被引：0

作者：

ROLLAND, M ^{[1
]}

GAILLARD, S ^{[1
]}

VILLEMAIN, E ^{[1
]}

RIGAUD, D ^{[1
]}

VALENZA, M ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,CNRS,URA 391,F-34095 MONTPELLIER 5,FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 09期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several metallization systems for producing ohmic contacts onto GaSb have been investigated. The minimization of contact resistivity was respectively obtained with Au-Zn on p type and Au-Te on n type. It has been shown that these results are due to an overdoped layer at the semiconductor surface. Low frequency noise measurements pointed out that the techniques used allow the realization of devices without 1/f contact noise.

引用

页码：1825 / 1832

页数：8

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