Ohmic contacts to n-type GaSb and n-type GaInAsSb

被引：10

作者：

Huang, RK ^{[1
]}

Wang, CA ^{[1
]}

Harris, CT ^{[1
]}

Connors, MK ^{[1
]}

Shiau, DA ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2004年 / 33卷 / 11期

关键词：

GaSb; GaInAsSb; TLM; ohmic contacts;

D O I：

10.1007/s11664-004-0171-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on semi-insulating (SI) GaAs substrates. These samples were fabricated into mesa-etched, transfer-length method (TLM) structures, and the specific-contact resistivity and sheet resistance of these layers as a function of majority electron concentration were measured. Extremely low specific-contact resistivities of about 2 x 10(-6) Omega-cm(2) and sheet resistances of about 4 Omega/rectangle are found for n-type GaInAsSb doped at about 3 x 10(18) cm(-3).

引用

页码：1406 / 1410

页数：5

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