Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb

被引：0
|
作者：
Ikossi, K [1 ]
Goldenberg, M [1 ]
Mittereder, J [1 ]
机构：
[1] USN, Res Lab, Microwave Technol Branch, Div Elect Sci & Technol, Washington, DC 20375 USA
来源：
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ISDRS.2001.984488
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：252 / 255
页数：4
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