A 700-MS/s 6-bit SAR ADC with partially active reference voltage buffer

被引:4
|
作者
Zhao, Long [1 ,2 ]
Li, Bao [1 ,2 ]
Cheng, Yuhua [1 ,2 ]
机构
[1] Peking Univ, Shanghai Res Inst Microelect, 608 Shengxia Rd,Zhangjiang Hitech Pk, Shanghai 201203, Peoples R China
[2] Peking Univ, Sch Elect Engn & Comp Sci, 5 Yiheyuan Rd, Beijing 100871, Peoples R China
来源
IEICE ELECTRONICS EXPRESS | 2018年 / 15卷 / 13期
基金
国家高技术研究发展计划(863计划);
关键词
SAR ADC; reference voltage buffer; asynchronous; low power; SINGLE-CHANNEL;
D O I
10.1587/elex.15.20180497
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a 700-MS/s 6-bit SAR ADC with a novel on-chip reference voltage buffer in a 40-nm CMOS Low-Leakage (LL) process. The reference voltage buffer is partially active depending on the operation state of the SAR ADC. The large driving current is provided only when the Capacitive Digital-to-Analog Converter (CDAC) is settling. This approach achieves 42% power reduction for the reference voltage buffer, which helps to improve the Figure-of-Merit (FoM) of the total SAR ADC chip. The measurement results show the ADC achieves an SNDR of 35.5 dB at the input frequency of 318.8 MHz. The chip consumes 4.0 mW including the SAR ADC core and the reference voltage buffer, resulting in an FoM of 117.8 fJ/conv.-step.
引用
收藏
页数:10
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