Solution-processed nickel tetrabenzoporphyrin thin-film transistors

被引:65
|
作者
Shea, Patrick B. [1 ]
Kanicki, Jerzy
Pattison, Lisa R.
Petroff, Pierre
Kawano, Manami
Yamada, Hiroko
Ono, Noboru
机构
[1] Univ Michigan, Dept Elect & Comp Engn, Organ & Mol Elect Lab, Ann Arbor, MI 48109 USA
[2] Univ Calif Santa Barbara, Dept Mat Sci & Engn, Santa Barbara, CA 93106 USA
[3] Ehime Univ, Fac Sci, Dept Chem, Matsuyama, Ehime 7908577, Japan
关键词
FIELD-EFFECT TRANSISTORS; PENTACENE PRECURSOR; COPPER PHTHALOCYANINE; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; HIGH-PERFORMANCE; SOLID-STATE; PORPHYRINS; SEMICONDUCTOR; MOBILITY;
D O I
10.1063/1.2220641
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe nickel tetrabenzoporphyrin (NiTBP) as a solution-processible organic semiconductor. Whereas porphyrins in an unmodified state are typically planar and insoluble, a precursor synthetic route (NiCP) was used to deposit thin films via solution. Amorphous, insulating thin films of NiCP were deposited, and thermally converted to polycrystalline, semiconducting NiTBP. Films were studied using optical absorption and microscopy, atomic force microscopy, and x-ray diffraction. Highly concentrated NiCP was shown to form large, needle-shaped crystals drop-cast from solution. NiTBP thin-film field-effect transistors fabricated from spun-cast films demonstrated charge-carrier field-effect mobilities on the order of 0.1 and 0.2 cm(2)/V s and accumulation threshold voltages of -19 and -13, in the linear and saturation regimes, respectively. (c) 2006 American Institute of Physics.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] High-performance solution-processed amorphous ZrInZnO thin-film transistors
    Chung, Ya-Wei
    Chen, Fang-Chung
    Chen, Ying-Ping
    Chen, Yu-Ze
    Chueh, Yu-Lun
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2012, 6 (9-10): : 400 - 402
  • [42] Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors
    Chen, Yonghua
    Yu, Zhinong
    Li, Xuyang
    Cheng, Jin
    2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT), 2018, : 22 - 22
  • [43] Approaches to Decreasing the Processing Temperature for a Solution-Processed InZnO Thin-Film Transistors
    Kim, Dong Lim
    Jeong, Woong Hee
    Kim, Hyun Jae
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (03)
  • [44] Stability study of solution-processed zinc tin oxide thin-film transistors
    Xue Zhang
    Jean Pierre Ndabakuranye
    Dong Wook Kim
    Jong Sun Choi
    Jaehoon Park
    Electronic Materials Letters, 2015, 11 : 964 - 972
  • [45] Controlling Nucleation and Crystallization in Solution-Processed Organic Semiconductors for Thin-Film Transistors
    Lee, Stephanie S.
    Kim, Chang Su
    Gomez, Enrique D.
    Purushothaman, Balaji
    Toney, Michael F.
    Wang, Cheng
    Hexemer, Alexander
    Anthony, John. E.
    Loo, Yueh-Lin
    ADVANCED MATERIALS, 2009, 21 (35) : 3605 - +
  • [46] Solution-Processed Hybrid Ambipolar Thin-Film Transistors Fabricated at Low Temperature
    Jeon, Jun-Young
    Yu, Byoung-Soo
    Kim, Yong-Hoon
    Ha, Tae-Jun
    ELECTRONIC MATERIALS LETTERS, 2019, 15 (04) : 402 - 408
  • [47] Recent advances in flexible solution-processed thin-film transistors for wearable electronics
    Ma, Li-Ya
    Soin, Norhayati
    Aidit, Siti Nabila
    Rezali, Fazliyatul Azwa Md
    Hatta, Sharifah Fatmadiana Wan Muhamad
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 165
  • [48] Solution-Processed SrOx-Gated Oxide Thin-Film Transistors and Inverters
    Fan, Caixuan
    Liu, Ao
    Meng, You
    Guo, Zidong
    Liu, Guoxia
    Shan, Fukai
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (10) : 4137 - 4143
  • [49] Enhanced Performance of Solution-Processed TESPE-ADT Thin-Film Transistors
    Chen, Liang-Hsiang
    Hu, Tarng-Shiang
    Huang, Peng-Yi
    Kim, Choongik
    Yang, Ching-Hao
    Wang, Juin-Jie
    Yan, Jing-Yi
    Ho, Jia-Chong
    Lee, Cheng-Chung
    Chen, Ming-Chou
    CHEMPHYSCHEM, 2013, 14 (12) : 2772 - 2776
  • [50] Dielectric Properties of Solution-Processed ZrO2 for Thin-Film Transistors
    Cho, Jaehee
    Choi, Pyungho
    Lee, Nayoung
    Kim, Sangsoo
    Choi, Byoungdeog
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (10) : 10380 - 10384