Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors

被引：0
|
作者：
Chen, Yonghua [1 ]
Yu, Zhinong [1 ]
Li, Xuyang [1 ]
Cheng, Jin [1 ]
机构：
[1] BIT, Sch Opt & Photon, Beijing, Peoples R China
来源：
2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT) | 2018年
基金：
中国国家自然科学基金;
关键词：
thin-film transistors; low-temperature preparation;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
We report a novel method for fabricating solution-processed quaternary In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) at low annealing temperature. The method is to spin coat such binary oxide layers as Ga2O3, ZnO and In2O3 consecutively and then anneal the layers at 250 degrees C. Finally, due to vertical diffusion of the binary oxides, the IGZO film with a vertically gradient In, Ga, Zn distribution (defined as vd-IGZO) is obtained and used as the channel layer of TFT. Compared with conventional IGZO (con-IGZO) TFTs annealing at 380 degrees C, the vd-IGZO TFTs have better electrical performances.
引用
收藏
页码：22 / 22
页数：1
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