Low temperature solution-processed IGZO thin-film transistors

被引：52

作者：

Xu, Wangying ^{[1
]}

Hu, Luyao ^{[1
]}

Zhao, Chun ^{[2
,3
]}

Zhang, Lingjiao ^{[1
]}

Zhu, Deliang ^{[1
]}

Cao, Peijiang ^{[1
]}

Liu, Wenjun ^{[1
]}

Han, Shun ^{[1
]}

Liu, Xinke ^{[1
]}

Jia, Fang ^{[1
]}

Zeng, Yuxiang ^{[1
]}

Lu, Youming ^{[1
]}

机构：

[1] Shenzhen Univ, Coll Mat Sci & Engn, Guangdong Res Ctr Interfacial Engn Funct Mat, Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China

[2] Xian Jiaotong Liverpool Univ, Dept Elect & Elect Engn, Suzhou 215123, Peoples R China

[3] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England

来源：

APPLIED SURFACE SCIENCE | 2018年 / 455卷

基金：

中国国家自然科学基金;

关键词：

Solution-processed; Low-temperature; IGZO; Thin-film transistors; PERFORMANCE OXIDE TRANSISTORS; HIGH-MOBILITY; SEMICONDUCTORS; INGAZNO; ROUTE; GA; FACILE;

D O I：

10.1016/j.apsusc.2018.06.005

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We reported the low-temperature high performance IGZO TFTs by solution processing. The influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques. The schematic of TFT solution-processed IGZO TFTs mobility with different compositions has been obtained. In order to achieve decent TFT performance, the In content should be much high for solution-processed IGZO TFTs. The optimal solution-processed IGZO TFTs. with In:Ga:Zn = 5:1:1 composition exhibited a large mobility of 9.1 cm (2)V(-)1s-(1),low subthreshold swing of 0.22 V/decade, and high on/off ratio of 10(6) at 300 degrees C processing temperature.

引用

页码：554 / 560

页数：7

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