Review of solution-processed oxide thin-film transistors

被引：193
|
作者：
Kim, Si Joon [1 ]
Yoon, Seokhyun [1 ]
Kim, Hyun Jae [1 ]
机构：
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
MULTISTACKED ACTIVE LAYERS; ARTIFICIAL DNA NANOSTRUCTURES; LOW-TEMPERATURE; HIGH-PERFORMANCE; ELECTRICAL PERFORMANCE; CHANNEL LAYER; SOL-GEL; SEMICONDUCTOR; FABRICATION; ROUTE;
D O I：
10.7567/JJAP.53.02BA02
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this review, we summarize solution-processed oxide thin-film transistors (TFTs) researches based on our fulfillments. We describe the fundamental studies of precursor composition effects at the beginning in order to figure out the role of each component in oxide semiconductors, and then present low temperature process for the adoption of flexible devices. Moreover, channel engineering for high performance and reliability of solution-processed oxide TFTs and various coating methods: spin-coating, inkjet printing, and gravure printing are also presented. The last topic of this review is an overview of multi-functional solution-processed oxide TFTs for various applications such as photodetector, biosensor, and memory. (C) 2014 The Japan Society of Applied Physics
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收藏
页数：10
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