High-performance solution-processed amorphous ZrInZnO thin-film transistors

被引：3

作者：

Chung, Ya-Wei ^{[3
]}

Chen, Fang-Chung ^{[1
,2
]}

Chen, Ying-Ping ^{[3
]}

Chen, Yu-Ze ^{[4
]}

Chueh, Yu-Lun ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[4] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 9-10期

关键词：

oxide semiconductors; amorphous thin films; transistors; zirconium;

D O I：

10.1002/pssr.201206323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm2/Vs, an onoff ratio of similar to 107, a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

下载

页码：400 / 402

页数：3

共 50 条

[1] High-Performance Solution-Processed ZrInZnO Thin-Film Transistors
Phan Trong Tue
Miyasako, Takaaki
Li, Jinwang
Huynh Thi Cam Tu
Inoue, Satoshi
Tokumitsu, Eisuke
Shimoda, Tatsuya
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 320 - 326
[2] Optimization of solution-processed amorphous cadmium gallium oxide for high-performance thin-film transistors
Le, Minh Nhut
Lee, Paul
Kang, Seung-Han
Ahn, Kyunghan
Park, Sung Kyu
Heo, Jaesang
Kim, Myung-Gil
JOURNAL OF MATERIALS CHEMISTRY C, 2023, 11 (22) : 7433 - 7440
[3] Enhanced Performance of Solution-Processed Amorphous LiTlnZnO Thin-Film Transistors
Koo, Chang Young
Song, Keunkyu
Jung, Yangho
Yang, Wooseok
Kim, Seung-Hyun
Jeong, Sunho
Moon, Jooho
ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (03) : 1456 - 1461
[4] High-Performance Solution-Processed Amorphous Zinc-Indium-Tin Oxide Thin-Film Transistors
Kim, Myung-Gil
Kim, Hyun Sung
Ha, Young-Geun
He, Jiaqing
Kanatzidis, Mercouri G.
Facchetti, Antonio
Marks, Tobin J.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2010, 132 (30) : 10352 - 10364
[5] Stability of Solution-processed ZrInZnO Thin-film Transistors under Gate Bias Stress
Jeong, Tae Hoon
Kim, Si Joon
Yoon, Doo Hyun
Jeong, Woong Hee
Kim, Dong Lim
Lim, Hyun Soo
Kim, Hyun Jae
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 59 (02) : 353 - 356
[6] Effects of Solution Temperature on Solution-Processed High-Performance Metal Oxide Thin-Film Transistors
Lee, Keun Ho
Park, Jee Ho
Yoo, Young Bum
Jang, Woo Soon
Oh, Jin Young
Chae, Soo Sang
Moon, Kyeong Ju
Myoung, Jae Min
Baik, Hong Koo
ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (07) : 2585 - 2592
[7] Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors
Xu, Feng
Liu, Ao
Liu, Guoxia
Shin, Byoungchul
Shan, Fukai
CERAMICS INTERNATIONAL, 2015, 41 : S337 - S343
[8] High-Performance Thin-Film Transistors with Aqueous Solution-Processed NiInO Channel Layer
Li, Yujia
Xu, Wangying
Liu, Wenjun
Han, Shun
Cao, Peijiang
Fang, Ming
Zhu, Deliang
Lu, Youming
ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (09): : 1842 - 1851
[9] High performance solution-processed indium oxide thin-film transistors
Kim, Hyun Sung
Byrne, Paul D.
Facchetti, Antonio
Marks, Tobin J.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (38) : 12580 - +
[10] High performance solution-processed indium oxide thin-film transistors
Hyun, Sung Kim
Byrne, Paul D.
Facchetti, Antonio
Marks, Tobin J.
Journal of the American Chemical Society, 2008, 130 (38): : 12580 - 12581

← 1 2 3 4 5 →