A Highly Compact 1W Ku-Band Power Amplifier

被引：1
|
作者：
Coquillas, B. [1 ,2 ]
Kerherve, E. [1 ]
Amiaud, Ac [2 ]
Roussel, L. [2 ]
Redois, S. [3 ]
Louis, B. [3 ]
Merlet, T. [2 ]
Petit, V [3 ]
机构：
[1] Univ Bordeaux, IMS Lab, Bordeaux, France
[2] THALES LAS, Elancourt, France
[3] THALES DMS, Elancourt, France
来源：
2022 IEEE 13TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS) | 2022年
关键词：
defense industry; design methodology; directional coupler; power amplifier; temperature simulation;
D O I：
10.1109/LASCAS53948.2022.9789049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a highly compact double-balanced two-stage Ku-Band SiGe power amplifier. Four power cells are combined in a balanced architecture which occupies less than 2mm(2). As a proof of concept, the power amplifier was designed with a 0.13-mu m SiGe BiCMOS technology. The simulated performances at 18GHz exhibit a saturated power higher than 30dBm up to 90 degrees C, a linear gain of 21.2dB and a peak power added efficiency of 26.5%.
引用
收藏
页码：192 / 195
页数：4
相关论文
共 50 条
  • [21] Ku-band pre-matched broadband GaN power amplifier with over 30 W power
    Yuan, Ye
    Fan, Yong
    Chen, Zhe
    Yang, Ziqiang
    Lin, Haodong
    ELECTRONICS LETTERS, 2016, 52 (10) : 872 - 874
  • [22] A 1-Watt Ku-Band Power Amplifier in SiGe with 37.5% PAE
    Chen, Ying
    van der Heijden, Mark P.
    Leenaerts, Domine M. W.
    2016 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2016, : 324 - 325
  • [23] Ku-Band 25 W High Power Amplifier using 0.25 μm GaN Technology
    Gedela, Santosh K.
    N'Gongo, Simplice
    Bantupalli, Kishore
    Suman, K.
    2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2021, : 269 - 272
  • [24] A Ku-Band Power Amplifier in 22nm FDSOI
    Haag, Alexander
    Ulusoy, Ahmet Cagri
    2024 IEEE 24TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, SIRF, 2024, : 1 - 4
  • [25] A 12-W GaN-HEMT Power Amplifier for Ku-Band Satellite Communication
    Maassen, Daniel
    Rautschke, Felix
    Huellen, Thomas
    Boeck, Georg
    2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), 2016,
  • [26] A 4W GaAs Power Amplifier MMIC for Ku-band Satellite Communication Applications
    Ryu, Keun-Kwan
    Ahn, Ki-Burm
    Kim, Sung-Chan
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15 (04) : 501 - 505
  • [27] A fully matched Ku-band 9W PHEMT MMIC high power amplifier
    Lin, C. H.
    Liu, H. Z.
    Chu, C. K.
    Huang, H. K.
    Wang, Y. H.
    Liu, C. C.
    Chang, C. H.
    Wu, C. L.
    Chang, C. S.
    IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006, 2006, : 165 - 168
  • [28] GaN HEMT based Ku-band Power Amplifier MMIC
    Imran, Mohd.
    Gupta, Parul
    Reeta
    Mishra, Meena
    2022 IEEE MICROWAVES, ANTENNAS, AND PROPAGATION CONFERENCE, MAPCON, 2022, : 792 - 795
  • [29] A Ku-Band High-Integrated CMOS Power Amplifier
    Li, Xiao
    Lv, Wei
    Li, Yongjie
    Wang, Yan
    Huang, Siwei
    Duan, Zongming
    2020 THE 5TH IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2020), 2020, : 142 - 145
  • [30] A self-bias Ku-band 1-watt PHEMT power amplifier MMIC with a compact source capacitor
    Liu, H. Z.
    Lin, C. H.
    Chu, C. K.
    Huang, H. K.
    Houng, M. P.
    Wang, Y. H.
    Chang, C. H.
    Wu, C. L.
    Chang, C. S.
    2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGS, 2005, : 207 - 210
12345