A Highly Compact 1W Ku-Band Power Amplifier

被引：1
|
作者：
Coquillas, B. [1 ,2 ]
Kerherve, E. [1 ]
Amiaud, Ac [2 ]
Roussel, L. [2 ]
Redois, S. [3 ]
Louis, B. [3 ]
Merlet, T. [2 ]
Petit, V [3 ]
机构：
[1] Univ Bordeaux, IMS Lab, Bordeaux, France
[2] THALES LAS, Elancourt, France
[3] THALES DMS, Elancourt, France
来源：
2022 IEEE 13TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS) | 2022年
关键词：
defense industry; design methodology; directional coupler; power amplifier; temperature simulation;
D O I：
10.1109/LASCAS53948.2022.9789049
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a highly compact double-balanced two-stage Ku-Band SiGe power amplifier. Four power cells are combined in a balanced architecture which occupies less than 2mm(2). As a proof of concept, the power amplifier was designed with a 0.13-mu m SiGe BiCMOS technology. The simulated performances at 18GHz exhibit a saturated power higher than 30dBm up to 90 degrees C, a linear gain of 21.2dB and a peak power added efficiency of 26.5%.
引用
收藏
页码：192 / 195
页数：4
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