A Ku-band 20 W GaN-MMIC Amplifier with Built-in Linearizer

被引：0
|
作者：
Kanaya, Koh [1 ]
Sato, Kunihiro [1 ]
Koyanagi, Motoyoshi [1 ]
Koyama, Hidetoshi [1 ]
Tsujioka, Kosaku [1 ]
Ohta, Akira [1 ]
Inoue, Akira [1 ]
Hirano, Yoshihito [1 ]
机构：
[1] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Itami, Hyogo 6648641, Japan
来源：
2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2014年
关键词：
amplifier; GaN; IM3; linearizer; MMIC;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This report describes a Ku-band amplifier GaN MMIC. The amplifier MMIC delivers a measured saturated power of 20 Wand gain of 20 dB under CW operation. To enhance the linearity of the two stage amplifier composed of the MMIC and GaN Internally Matched FET, a diode linearizer has also been built into the MMIC. The linearizer offers 5dB better linear output power, defined the output power at IM3 of -25 dBc, compared with that of MMIC without the linearizer. To our knowledge, this is the first report to present GaN-based high power amplifier MMIC with a built-in linearizer which can enhance the linearity of a PA system.
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页数：4
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