Ku-band pre-matched broadband GaN power amplifier with over 30 W power

被引：3
|
作者：
Yuan, Ye [1 ]
Fan, Yong [1 ]
Chen, Zhe [1 ]
Yang, Ziqiang [1 ]
Lin, Haodong [1 ]
机构：
[1] Univ Elect Sci & Technol China, EHF Key Lab Fundamental Sci, Sch Elect Engn, Chengdu 611731, Peoples R China
来源：
ELECTRONICS LETTERS | 2016年 / 52卷 / 10期
基金：
中国国家自然科学基金;
关键词：
gallium compounds; wide band gap semiconductors; III-V semiconductors; microwave power amplifiers; wideband amplifiers; -band pre-matched broadband gallium nitride power amplifier; internally matched power amplifier; high-power amplifier; HPA; frequency; 13; 5 GHz to 17 GHz; efficiency; 42; percent; GaN;
D O I：
10.1049/el.2015.4463
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ku-band pre-matched broadband gallium nitride (GaN) power amplifier is proposed. Compared to conventional internally matched power amplifier, this high-power amplifier (HPA) can provide broadband and high-power gain. Measurement results show that the HPA has >20 dB power gain in the frequency range of 13.5-17 GHz. The maximum saturated output power (P-sat) of 46 dBm and power added efficiency (PAE) of 42% are achieved at 15.5 GHz.
引用
收藏
页码：872 / 874
页数：2
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