A Hybrid 50-W GaN-HEMT Ku-Band Power Amplifier

被引：0
|
作者：
Rautschke, Felix [1 ]
Maassen, Daniel [1 ]
Ohnimust, Florian [2 ]
Sehenk, Lothar [2 ]
Dalisda, Uwe [2 ]
Boeck, Georg [1 ,3 ]
机构：
[1] Berlin Inst Technol, Microwave Engn Lab, Berlin, Germany
[2] Rohde & Schwarz GmbH & Co KG, Munich, Germany
[3] LeibnizInstitut Hoechstfrequenztech, FBH, Berlin, Germany
来源：
2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2016年
关键词：
Terms Digital video broadcasting; gallium nitride; HEMTs; microwave circuits; power amplifiers; satellite ground stations;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper the design, implementation, and experimental results of a Ku-band 50 W GaN-HEMT power amplifier (PA) for satellite communication are presented. A 250 nm bare die device has been chosen to achieve high saturated efficiency over the whole extended Ku-band uplink (13.75-14.5 GHz). The circuit was realized in a hybrid microwave integrated circuit (MIC) technology on an alumina substrate. The PA shows a measured performance of more than 40 W output power for a continuous wave (CW) signal with a PAE higher than 21 %. Modulated measurements (QPSK) demonstrate an output power of more than 30 W (50 W peak) and 21 % PAE, while holding the linearity requirements specified by Eutelsat.
引用
收藏
页码：1079 / 1082
页数：4
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